This research article was devoted to study some electrical characteristics of chalcogenide bulk Cd50S50-xSex (30 % ≤ x ≤ 50 %) glassy systems. CdSSe Bulk glasses were previously prepared by the mechanical milling technique. The products of the grinding process were pressed as disc-shaped pellets of diameter 12 mm and thickness 1.5 mm by using a compressor of pressure about 6.5 MPa. Two point probe technique was used to measure the electrical resistance and dc-electrical conductivity in the temperature range 293 K-435 K. Conduction mechanism studies reveal that, the transition temperature was detected at around 370 K. Below this temperature, the conduction mechanism was via the variable range hopping conduction near Fermi level according to Mott's model. Above 370 K, the mechanism was hopping conduction via localized states by the activated thermionic emission. The activation energies of bulk CdSSe glasses were found to be decreased by adding more Se. The pre-exponential factors, Mott parameters, and the density of localized states near Fermi level, trapping state energy, the potential barrier energy, were evaluated and studied. The relation between cohesive and activation energies was discussed. All obtained data were strongly dependent upon Se-content in the bulk Cd50S50-xSex glassy compositions. |
