In this paper, we theoretically investigate the effect of the doping concentration on the properties of one dimensional semiconductor photonic band structures. Our numerical method is based on the transfer matrix method. The numerical results show that the photonic band gaps in is sensitive to the changes in the doping concentration. In addition, the width of the gap of is less sensitive to the change in the doping concentration. Our structures could be of technical use in optical electronics for semiconductor applications. We have designed the first case is (SiO2/GaAs)N photonic crystal (PC) without defect layers and the second case are (SiO2/n-Ge/GaAs)N and (SiO2/GaAs)ND( SiO2/GaAs)N photonic crystals with defect layers. The numerical results show that the number of photonic band gaps (PBG) in the second case (PC with defect layer) is greater than that in the first case (PC without defect layer).

In this paper, based on the transfer matrix method, the transmission properties in the infrared (IR) region for one-dimensional binary and ternary photonic crystals under the effect of temperature variations have been theoretically studied. Both thermal expansion effect and thermo-optical effect are considered simultaneously. The numerical results show that the photonic band gap can be significantly enlarged compared to the photonic band gap at room temperature. Furthermore, the calculated transmission characteristics in the wavelength domain demonstrate that, ternary structure has a significant effect in the width of the photonic band gap compared to the usual binary photonic crystals. The roles played by the related parameters, such as the thickness of the constituent materials will be discussed and illustrated.