You are in:Home/Publications/“Double-gate Silicon on insulator transistor with volume inversion A new device with greatly enhanced performance” IEEE Electron Device Lett., vol. EDL-8, pp. 410—413. | |
Dr. Mohamed Tarek Hasan Mohamed Elewa :: Publications: |
Title: | “Double-gate Silicon on insulator transistor with volume inversion A new device with greatly enhanced performance”
IEEE Electron Device Lett., vol. EDL-8, pp. 410—413.
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Authors: | F. BALESTRA, S. GRISTOLOVEANU, M. BENACHIR., J. BRINI and T. ELEWA |
Year: | 1987 |
Keywords: | Not Available |
Journal: | Not Available |
Volume: | Not Available |
Issue: | Not Available |
Pages: | Not Available |
Publisher: | Not Available |
Local/International: | International |
Paper Link: | Not Available |
Full paper | Not Available |
Supplementary materials | Not Available |
Abstract: |
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