You are in:Home/Publications/“A new transient drain current technique for interface characterization in SOI MOSFET’s” Proceedings of the 5th International Symposium On Silicon On Insulator Technology and Devices, USA, vol.92—13, pp. 195—202. | |
Dr. Mohamed Tarek Hasan Mohamed Elewa :: Publications: |
Title: | “A new transient drain current technique for interface characterization in SOI MOSFET’s” Proceedings of the 5th International Symposium On Silicon On Insulator Technology and Devices, USA, vol.92—13, pp. 195—202.
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Authors: | H. HADDARA, T. ELEWA and S. CRISTOLOVEANU |
Year: | 1992 |
Keywords: | Not Available |
Journal: | Not Available |
Volume: | Not Available |
Issue: | Not Available |
Pages: | Not Available |
Publisher: | Not Available |
Local/International: | International |
Paper Link: | Not Available |
Full paper | Not Available |
Supplementary materials | Not Available |
Abstract: |
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