You are in:Home/Publications/“Simulation of narrow channel effects in SIMOX MOS transistors” Ain Shams University Engineering Bulletin, vol 29, pp. 165-180, March.

Dr. Mohamed Tarek Hasan Mohamed Elewa :: Publications:

Title:
“Simulation of narrow channel effects in SIMOX MOS transistors” Ain Shams University Engineering Bulletin, vol 29, pp. 165-180, March.
Authors: H. RAAFAT, M. T. ELEWA, H. HADDARA, H. F. RAGAIE and A. EL—MAHDY
Year: 1994
Keywords: Not Available
Journal: Not Available
Volume: Not Available
Issue: Not Available
Pages: Not Available
Publisher: Not Available
Local/International: Local
Paper Link: Not Available
Full paper Not Available
Supplementary materials Not Available
Abstract:

Google ScholarAcdemia.eduResearch GateLinkedinFacebookTwitterGoogle PlusYoutubeWordpressInstagramMendeleyZoteroEvernoteORCIDScopus