The quantum transport characteristics of the strained graphene nanoribbon nanodevice are investigated under the effect of both ac-field of different frequencies and magnetic field. This nanodevice is modeled as follows: A graphene nanoribbon is connected to two metallic leads. These two metallic leads operate as a source and a drain. The conducting substance is the gate electrode in this three-terminal nanodevice. Another metallic gate is used to govern the electrostatics and the switching of graphene nanoribbon channel. The substances at the graphene nanoribbon/ metal contact are controlled by the back gate. The photon-assisted tunneling probability is deduced by solving the Dirac eigenvalue differential equation and the corresponding conductance is also, derived using Landauer-Buttiker formula. The band structure parameters of graphene nanoribbon as the energy gap, the C-C bond length, the hopping integral, Fermi energy and the width are modulated by uniaxial strain. Results show that the conduction mechanism through the nanodevice is enhanced by the interplay between the transport charge Dirac fermions and the photons energy of the induced ac-field. Also, according to the results obtained in the present paper that the electronic transport through the present investigated graphene nanoribbon field effect transistor occurs by variable range hopping. The present research is very important in the field nanotechnology, that is, the present graphene nanoribbon nanodevices could be applied as digital nanoelectronics, logic gates, information technology, spintronics and photodetectors. |
