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Prof. Tarek Mohammad Abdolkader Hasan :: Publications:

Title:
A Numerical Simulation Tool for Nanoscale Ion-Sensitive Field-Effect Transistor
Authors: Tarek M. Abdolkader
Year: 2016
Keywords: Device simulation, ISFET sensitivity, Nanoscale ISFET, NIST, numerical modeling, pH sensors.
Journal: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
Volume: 29
Issue: jnm.2170
Pages: 1118-1128
Publisher: Wiley
Local/International: International
Paper Link:
Full paper Tarek Mohammad Abdolkader Hasan_2106_Tarek_Numerical simulation tool for nanoscale ISFET.pdf
Supplementary materials Not Available
Abstract:

In this work, a self-contained numerical simulation tool for nanoscale Ion-Sensitive Field-Effect Transistor (ISFET) is developed. The tool is based on merging nanoscale ballistic MOSFET analytical equations with the Gouy–Chapman–Stern model equations of ISFET to form a system of nonlinear equations that can be solved iteratively to yield ISFET output current. The numerical solution is accomplished using Newton-Raphson method with efficient trust-region-dogleg algorithm using MATLAB software coding. The tool is used to optimize the sensitivity and linearity of nanoscale ISFETs, and to study their dependence on reference voltage, drain current level, and gate-insulator thickness. Moreover, a comparison between three types of insulators, SiO2, Si3N4, and Al2O3, has been made. The tool is given the name: NIST (Nanoscale ISFET Simulation Tool). It can be used as a guide for design and optimization of nanoscale ISFETs and can be applied for both single-gate and double-gate structures.

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