Tarek Mohammad Abdolkader Hasan|Publications

You are in:Home/Publications
Prof. Tarek Mohammad Abdolkader Hasan :: Publications:

Research Fields

solar cells

nanoelectronic devices

biosensors

Number of publications is 25

Title

1-Design and analysis of Sb2S3/Si thin film tandem solar cell

Abstract

2-Performance enhancement of a proposed solar cell microstructure based on heavily doped silicon wafers

Abstract' | Full paper

3-Computational Modeling of Polycrystalline Silicon on Oxide Passivating Contact for Silicon Solar Cells

Abstract' | Full paper

4-Numerical simulation of tunneling through arbitrary potential barriers applied on MIM and MIIM rectenna diodes

Abstract' | Full paper

5-High-Performance Bifacial Perovskite/Silicon Double-Tandem Solar Cell

Abstract' | Full paper

6-Carrier-Selective NiO/Si and TiO2/Si Contacts for Silicon Heterojunction Solar Cells

Abstract' | Full paper

7-A Numerical Simulation Tool for Nanoscale Ion-Sensitive Field-Effect Transistor

Abstract' | Full paper

8-Compact model for ballistic MOSFET-like carbon nanotube field-effect transistors

Abstract' | Full paper

9-ISFET pH-sensor Sensitivity Extraction using Conventional MOSFET Simulation tools

Abstract' | Full paper

10-A Novel Electro-Thermal Model for Carbon Nanotube Interconnects

Abstract' | Full paper

11-Analytical model for ballistic MOSFET-like carbon nanotube field-effect transistors

Abstract' | Full paper

12-“Simulation of quantum transport in double-gate MOSFETs using the non-equilibrium Green's function formalism in real-space: A comparison of four methods,” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Published online in Wiley InterScience (www.interscience.wiley.com).

Abstract' | Full paper

13-Diameter-dependent analytical model for light spot movement in carbon nanotube array transistors

14-“Efficient Multi-scale Self-consistent simulation of planar Schottky-Barrier Carbon Nanotube Field-Effect Transistors and arrays,”18th Biennial IEEE UGIM (University Government Industry Micro/nano) Symposium,UGIM10, p. 116, June/July 2010.

Abstract

15-“Gate leakage in low standby power 16 nm gate length double-gate MOSFETs,” 2009 National Radio Science Conference, NRSC 2009, March 17- 19.

16-“A Computationally efficient method for quantum transport simulation of double-gate MOSFETs,” 2009 National Radio Science Conference, NRSC 2009, March 17- 19.

Abstract' | Full paper

17-“Quantum Transport Based Simulation and Design Optimization of a 10 nm FinFET,” 2009 4th Ieee International Conference on Design & Technology of Integrated Systems in Nanoscale Era, Proceedings, pp. 125-129.

18-“Inspection of the Contact Block Reduction method for quantum transport simulation of FinFETs,”Radio Science Conference.NRSC 2009. National Volume Issue, pp. 1 – 8, 17-19 March 2009.

19-“Compact Model for Undoped Symmetric Double Gate Comprising Quantization Effect," to appear in 6th International Conference on Electrical Engineering (ICEENG), 27-29May 2008, Military Technical College, Cairo, Egypt.

20-“A new approach for numerical simulation of quantum transport in double-gate SOI,” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, , Vol. 20, Issue 6, pp. 299-309.Available online at http://www3.interscience.wiley.com/

Abstract' | Full paper

21-“Uncoupled Mode-Space Simulation Validity for Double Gate MOSFETs," 19th International Conference on Microelectronics (ICM), 29-31 December 2007, Cairo, Egypt.

22-"FETMOSS: a software tool for 2D simulation of double-gate MOSFET, "International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Vol. 19, Issue 4, pp. 301-314.

Abstract' | Full paper

23-“Simulation of quantum transport in ballistic double-gate MOSFETs using transfer matrix method,” The 2006 International Conference on Computer Engineering & systems, ICCES’06, pp. 91-96.

24-“Solution of Schrödinger equation in double-gate MOSFETs using transfer matrix method,” Electronic Letters, vol. 40, No. 20, p. 1307.

Abstract' | Full paper

25-“Semi-empirical quantum correction model for electron concentration in symmetric double gate MOSFETs,” The International Conference on Electrical, Electronic and Computer Engineering, ICEEC’04, p. 549.

Prof. Tarek Mohammad Abdolkader Hasan :: Publications: